leshan radio company, ltd. the l 74vhc1g50 is a single gate noninverting buffer fabricated with silicon gate cmos technology. it achieves high speed operation similar to equivalent bipolar schottky ttl while maintaining cmos low power dissipation. the internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable outpu t. noninverting buffer / cmos logic level shifter vl d vl d 1 3 2 4 5 sot?23/tsop?5/sc?59 dt suffix sc?70/sc?88a/sot?353 df suffix 1 3 2 4 5 marking diagrams pin 1 d = date code pin 1 d = date code figure 1. pinout (top view) figure 2. logic symbol pin assignment 1nc 2 in a 3 gnd 4 out y 5v cc function table inputs output ay ll hh ordering information see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. high speed: t pd = 3.5 ns (typ) at v cc = 5 v low power dissipation: i cc = 2 ma (max) at t a = 25c ttl?compatible inputs: v il = 0.8 v; v ih = 2.0 v cmos?compatible outputs: v oh > 0.8 v cc ; v ol < 0.1 v cc @load power down protection provided on inputs and outputs balanced propagation delays pin and function compatible with other standard logic families chip complexity: fets = 104; equivalent gates = 26 l 7 4 vhc1g50 the l 74vhc1g50 input structure provides protection when voltages up to 7 v are applied, regardless of the supply voltage. this allows the l 74vhc1g50 to be used to interface 5 v circuits to 3 v circuits. 1/6
leshan radio company, ltd. l 74vhc1g50 device junction temperature versus time to 0.1% bond failures junction t ime, time, temperature c hours years 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 normalized failure rate figure 3. failure rate vs. time junction temperature 1 1 10 100 1000 maximum ratings symbol parameter value unit v cc dc supply voltage ? 0.5 to + 7.0 v v in dc input voltage ? 0.5 to +7.0 v v out dc output voltage v cc =0 ? 0.5 to +7.0 v high or low state ?0.5 to v cc + 0.5 i ik input diode current ?20 ma i ok output diode current v out < gnd; v out > v cc +20 ma i out dc output current, per pin + 25 ma i cc dc supply current, v cc and gnd +50 ma p d power dissipation in still air sc?88a, tsop?5 200 mw ja thermal resistance sc?88a, tsop?5 333 c/w t l lead temperature, 1 mm from case for 10 s 260 c t j junction temperature under bias + 150 c t stg storage temperature ?65 to +150 c v esd esd withstand voltage human body model (note 2) >2000 v machine model (note 3) > 200 charged device model (note 4) n/a i latch?up latch?up performance above v cc and below gnd at 125c (note 5) 500 ma 1. maximum ratings are those values beyond which damage to the device may occur. exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. functional operation under absolute?maximum?rated conditions is not implied. functional operation should be restricted to the recommended operating conditions. 2. tested to eia/jesd22?a114?a 3. tested to eia/jesd22?a115?a 4. tested to jesd22?c101?a 5. tested to eia/jesd78 time, years recommended operating conditions symbol parameter min max unit v cc dc supply voltage 3.0 5.5 v v in dc input voltage 0.0 5.5 v v out dc output voltage v cc = 0 0.0 5.5 v high low state 0.0 v cc t a operating temperature range ? 55 + 125 c t r ,t f input rise and fall time v cc = 3.3 0.3 v 0 100 ns/v v cc = 5.0 0.5 v 0 20 2/6
leshan radio company, ltd. l 74vhc1g50 ac electrical characteristics c load = 50 pf, input t r = t f = 3.0 ns t a = 25 c t a < 85 c ?55c leshan radio company, ltd. l 74vhc1g50 figure 4. switching waveforms *includes all probe and jig capacitance figure 5. test circuit device ordering information device nomenclature l 74vhc1g50dft1 l 7 4 v hc1g 50 d f t 1 s c?70/sc?88a/ 1 78 mm (7 in) sot?353 3000 unit l 74vhc1g50dft2 l 7 4 v hc1g 50 d f t 2 s c?70/sc?88a/ 1 78 mm (7 in) sot?353 3000 unit l 74vhc1g50dft4 l 7 4 v hc1g 50 d f t 4 s c?70/sc?88a/ 3 30 mm (13 in) sot?353 10,000 unit l 74vhc1g50dtt1 l 7 4 v hc1g 50 d t t 1 s ot?23/tsops/ 1 78 mm (7 in) sc?59 3000 unit l 74vhc1g50dtt3 l 7 4 v hc1g 50 d t t 3 s ot?23/tsops/ 3 30 mm (13 in) sc?59 10,000 unit device order number circuit indicator temp range identifier technology device function package suffix tape & reel suffix package type (name/sot#/ common name) tape and reel size 3.0v v oh v ol y 4/6
leshan radio company, ltd. l 74 v hc1g 50 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a?01 obsolete. new standard 419a?02. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k ?b? sc70?5/sc?88a/sot?353 df suffix soldering footprint* mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 5/6
leshan radio company, ltd. l 74 v hc1g 5 0 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. a and b dimensions do not include mold flash, protrusions, or gate burrs. dim min max min max inches millimeters a 2.90 3.10 0.1142 0.1220 b 1.30 1.70 0.0512 0.0669 c 0.90 1.10 0.0354 0.0433 d 0.25 0.50 0.0098 0.0197 g 0.85 1.05 0.0335 0.0413 h 0.013 0.100 0.0005 0.0040 j 0.10 0.26 0.0040 0.0102 k 0.20 0.60 0.0079 0.0236 l 1.25 1.55 0.0493 0.0610 m 0 10 0 10 s 2.50 3.00 0.0985 0.1181 0.05 (0.002) 123 54 s a g l b d h c k m j __ _ _ sot23?5/tsop?5/sc59?5 dt suffix 0.7 0.028 1.0 0.039 mm inches scale 10:1 0.95 0.037 2.4 0.094 1.9 0.074 soldering footprint* 6/6
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